GeneSiC Semiconductor G3R20MT12N

Package / Case

QFN

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Standard Frequency

50

Operating Temp Range

-40C to 85C

Operating Supply Voltage (Max)

2.75(V)

Operating Supply Voltage (Min)

2.25(V)

Programmable

No

Continuous Drain Current Id

105A

Package

Tube

Base Product Number

G3R20

Current - Continuous Drain (Id) @ 25℃

105A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Mfr

GeneSiC Semiconductor

Power Dissipation (Max)

365W (Tc)

Product Status

Active

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

338 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

180 nC

Rds On - Drain-Source Resistance

20 mOhms

Id - Continuous Drain Current

93 A

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Bulk

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Series

G3R™

Type

CLOCK OSCILLATOR

Technology

SiCFET (Silicon Carbide)

Frequency Stability

the variation of output frequency of a crystal oscillator due to external conditions like temperature variation, voltage variation, output load variation, and frequency aging.

±50(ppm)

Symmetry-Max

55(%)

Number of Channels

1 Channel

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

365W

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

24mOhm @ 60A, 15V

Vgs(th) (Max) @ Id

2.69V @ 15mA

Input Capacitance (Ciss) (Max) @ Vds

5873 pF @ 800 V

Gate Charge (Qg) (Max) @ Vgs

219 nC @ 15 V

Drain to Source Voltage (Vdss)

1200 V

Vgs (Max)

+20V, -10V

Channel Type

N Channel

FET Feature

-