G3R60MT07D

GeneSiC Semiconductor G3R60MT07D

Part No:

G3R60MT07D

Datasheet:

-

Package:

TO-247-3

AINNX NO:

28440779-G3R60MT07D

Description:

750V 60M TO-247-3 G3R SIC MOSFET

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3
  • Mfr
    GeneSiC Semiconductor
  • Package
    Tube
  • Product Status
    Active
  • Current - Continuous Drain (Id) @ 25℃
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Power Dissipation (Max)
    -
  • Vds - Drain-Source Breakdown Voltage
    750 V
  • Vgs th - Gate-Source Threshold Voltage
    2.5 V
  • Pd - Power Dissipation
    171 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Vgs - Gate-Source Voltage
    - 5 V, + 15 V
  • Minimum Operating Temperature
    - 55 C
  • Mounting Styles
    Through Hole
  • Channel Mode
    Enhancement
  • Qg - Gate Charge
    47 nC
  • Rds On - Drain-Source Resistance
    60 mOhms
  • Id - Continuous Drain Current
    43 A
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -
  • Number of Channels
    1 Channel
  • FET Type
    -
  • Rds On (Max) @ Id, Vgs
    -
  • Vgs(th) (Max) @ Id
    -
  • Drain to Source Voltage (Vdss)
    750 V
  • Vgs (Max)
    -
  • FET Feature
    -
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