GeneSiC Semiconductor G3R40MT12D

Mounting Type

Surface Mount

Package / Case

48-TFSOP (0.240, 6.10mm Width)

Supplier Device Package

48-TSSOP

Frequency-Max

220MHz

Continuous Drain Current Id

71A

Package

Tube

Base Product Number

G3R40

Current - Continuous Drain (Id) @ 25℃

71A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Mfr

GeneSiC Semiconductor

Power Dissipation (Max)

333W (Tc)

Product Status

Active

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

297 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

Through Hole

Channel Mode

Enhancement

Qg - Gate Charge

88 nC

Rds On - Drain-Source Resistance

40 mOhms

Id - Continuous Drain Current

63 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

0°C ~ 70°C

Series

--

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Technology

SiCFET (Silicon Carbide)

Voltage - Supply

3.135 V ~ 3.465 V

Base Part Number

ICS9DB108

Output

Clock

Number of Channels

1 Channel

Number of Circuits

1

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

333W

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

48mOhm @ 35A, 15V

Vgs(th) (Max) @ Id

2.69V @ 10mA

Input Capacitance (Ciss) (Max) @ Vds

2929 pF @ 800 V

Gate Charge (Qg) (Max) @ Vgs

106 nC @ 15 V

Drain to Source Voltage (Vdss)

1200 V

Vgs (Max)

±15V

Input

Clock

Ratio - Input:Output

1:8

PLL

Yes

Differential - Input:Output

Yes/Yes

Channel Type

N Channel

Main Purpose

PCI Express (PCIe)

FET Feature

-