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VISHAY SIRB40DP-T1-GE3
Part No:
SIRB40DP-T1-GE3
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69920011-SIRB40DP-T1-GE3
Category:
Description:
Transistor: N-MOSFET x2;TrenchFET®;unipolar;40V;40A;Idm: 100A
Products specifications
- Type of transistorN-MOSFET x2
- Polarisationunipolar
- Drain-source voltage40V
- Drain current40A
- Pulsed drain current100A
- CasePowerPAK® SO8
- Gate-source voltage-16...20V
- MountingSMD
- Kind of package1tape
- Kind of packagereel
- Kind of channelenhanced
- Gross weight1g
- CertificatesRoHS compliant
- Power dissipation29.6W
- Gate charge93nC
- On-state resistance4.2mΩ
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Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$127.832173
$127.85
10+
$120.596363
$1,206.00
100+
$113.770192
$11,377.07
500+
$107.330348
$53,665.19
1000+
$101.255090
$101,255.10
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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