All Products
VISHAY SIS932EDN-T1-GE3
Part No:
SIS932EDN-T1-GE3
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69920289-SIS932EDN-T1-GE3
Category:
Description:
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A
Products specifications
- Type of transistorN-MOSFET x2
- Polarisationunipolar
- Drain-source voltage30V
- Drain current6A
- Pulsed drain current40A
- CasePowerPAK® 1212-8
- Gate-source voltage±12V
- MountingSMD
- Kind of package1tape
- Kind of packagereel
- Kind of channelenhanced
- CertificatesRoHS compliant
0 Similar Products Remaining
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$23.638374
$23.67
10+
$22.300352
$223.06
100+
$21.038095
$2,103.76
500+
$19.847245
$9,923.67
1000+
$18.723823
$18,723.79
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Hot Sale
SI7949DP-T1-E3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -5A; Idm: -25ASI6913DQ-T1-E3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -5.8A; 1.14WSI7913DN-T1-GE3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -7.4A; 2.8WSI1553CDL-T1-GE3
VISHAYTransistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 700/-500mASI4963BDY-T1-GE3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8SI5517DU-T1-GE3
VISHAYTransistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3WSI1965DH-T1-GE3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25WSI1967DH-T1-E3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25WSI4931DY-T1-GE3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8SI1023X-T1-GE3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -390mA; 280mW