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VISHAY SIS932EDN-T1-GE3
Part No:
SIS932EDN-T1-GE3
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69920289-SIS932EDN-T1-GE3
Category:
Description:
Transistor: N-MOSFET x2;TrenchFET®;unipolar;30V;6A;Idm: 40A
Products specifications
- Type of transistorN-MOSFET x2
- Polarisationunipolar
- Drain-source voltage30V
- Drain current6A
- Pulsed drain current40A
- CasePowerPAK® 1212-8
- Gate-source voltage±12V
- MountingSMD
- Kind of package1tape
- Kind of packagereel
- Kind of channelenhanced
- Gross weight1g
- CertificatesRoHS compliant
- Power dissipation14.8W
- Gate charge14nC
- On-state resistance26mΩ
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Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$28.562209
$28.57
10+
$26.945498
$269.51
100+
$25.420264
$2,542.02
500+
$23.981393
$11,990.64
1000+
$22.623986
$22,624.01
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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