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VISHAY SI1902DL-T1-GE3
Part No:
SI1902DL-T1-GE3
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69941090-SI1902DL-T1-GE3
Category:
Description:
Transistor: N-MOSFET x2;TrenchFET®;unipolar;20V;660mA;Idm: 1A
Products specifications
- Type of transistorN-MOSFET x2
- Polarisationunipolar
- Drain-source voltage20V
- Drain current0.66A
- Pulsed drain current1A
- CaseSC70
- Gate-source voltage±12V
- MountingSMD
- Kind of package1tape
- Kind of packagereel
- Kind of channelenhanced
- Gross weight0.01g
- CertificatesRoHS compliant
- Power dissipation0.27W
- Gate charge0.8nC
- On-state resistance0.63Ω
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Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$47.019016
$47.06
10+
$44.357563
$443.58
100+
$41.846723
$4,184.63
500+
$39.478079
$19,739.02
1000+
$37.243421
$37,243.46
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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