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VISHAY SI7913DN-T1-GE3
Part No:
SI7913DN-T1-GE3
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69909657-SI7913DN-T1-GE3
Category:
Description:
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -7.4A; 2.8W
Products specifications
- Type of transistorP-MOSFET x2
- Polarisationunipolar
- Drain-source voltage-20V
- Drain current-7.4A
- Pulsed drain current-20A
- CasePowerPAK® 1212-8
- Gate-source voltage±8V
- MountingSMD
- Kind of package1tape
- Kind of packagereel
- Kind of channelenhanced
- CertificatesRoHS compliant
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