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SI7913DN-T1-GE3

VISHAY SI7913DN-T1-GE3

Part No:

SI7913DN-T1-GE3

Manufacturer:

VISHAY

Datasheet:

-

Package:

-

AINNX NO:

69909657-SI7913DN-T1-GE3

Description:

Transistor: P-MOSFET x2;TrenchFET®;unipolar;-20V;-7.4A;2.8W

Products specifications
  • Type of transistor
    P-MOSFET x2
  • Polarisation
    unipolar
  • Drain-source voltage
    -20V
  • Drain current
    -7.4A
  • Pulsed drain current
    -20A
  • Case
    PowerPAK® 1212-8
  • Gate-source voltage
    ±8V
  • Mounting
    SMD
  • Kind of package1
    tape
  • Kind of package
    reel
  • Kind of channel
    enhanced
  • Gross weight
    0.1g
  • Certificates
    RoHS compliant
  • Power dissipation
    2.8W
  • Gate charge
    24nC
  • On-state resistance
    66mΩ
0 Similar Products Remaining
Pricing & Ordering

  • Quantity

    Unit Price

    Ext. Price

  • 1+

    $219.214010

    $219.21

  • 10+

    $206.805654

    $2,068.07

  • 100+

    $195.099664

    $19,509.96

  • 500+

    $184.056351

    $92,028.21

  • 1000+

    $173.638019

    $173,638.06

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

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