Material
Si
ECCN (US)
EAR99
HTS
8541.29.00.95
Channel Mode
Enhancement
Number of Elements per Chip
1
Process Technology
DMOS
Maximum Drain Source Voltage (V)
40
Maximum Gate Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
7
Maximum VSWR
20(Min)
Maximum Continuous Drain Current (A)
10
Maximum Gate Source Leakage Current (nA)
1000
Maximum IDSS (uA)
1000
Typical Input Capacitance @ Vds (pF)
60(Max)@20V
Typical Reverse Transfer Capacitance @ Vds (pF)
4(Max)@12.5V
Typical Output Capacitance @ Vds (pF)
40(Max)@12.5V
Typical Forward Transconductance (S)
0.8(Min)
Maximum Power Dissipation (mW)
50000
Output Power (W)
10
Typical Power Gain (dB)
10(Min)
Maximum Frequency (MHz)
500
Minimum Frequency (MHz)
1
Typical Drain Efficiency (%)
50(Min)
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
200
Standard Package Name
Module
Supplier Package
Case DP
Military
No
Mounting
Screw
Package Height
5.08
Package Length
18.92
Package Width
6.35
PCB changed
3
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Obsolete
Pin Count
a count of all of the component leads (or pins)
3
Configuration
Single
Channel Type
N
RoHS Status
RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.
RoHS Compliant