HCT802

TT Electronics HCT802

Part No:

HCT802

Manufacturer:

TT Electronics

Datasheet:

-

Package:

-

AINNX NO:

32783345-HCT802

Description:

RF Bipolar Transistors MOSFET DEM Mosfet

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    6
  • Transistor Element Material
    SILICON
  • Manufacturer Part Number
    HCT802
  • Rohs Code
    No
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    OPTEK TECHNOLOGY INC
  • Package Description
    SMALL OUTLINE, R-CDSO-N6
  • Risk Rank
    5.76
  • Drain Current-Max (ID)
    2 A
  • Number of Elements
    2
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH RELIABILITY
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.21.00.95
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-CDSO-N6
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SEPARATE, 2 ELEMENTS
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Drain-source On Resistance-Max
    5 Ω
  • DS Breakdown Voltage-Min
    90 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    0.5 W
  • Feedback Cap-Max (Crss)
    10 pF
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