TP65H150G4LSG-TR

Transphorm TP65H150G4LSG-TR

Part No:

TP65H150G4LSG-TR

Manufacturer:

Transphorm

Datasheet:

-

Package:

2-PowerTSFN

AINNX NO:

28661509-TP65H150G4LSG-TR

Description:

650 V 13 A GAN FET

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    2-PowerTSFN
  • Supplier Device Package
    2-PQFN (8x8)
  • Mfr
    Transphorm
  • Product Status
    Active
  • Current - Continuous Drain (Id) @ 25℃
    13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Power Dissipation (Max)
    52W (Tc)
  • Vds - Drain-Source Breakdown Voltage
    650 V
  • Moisture Sensitive
    Yes
  • Vgs th - Gate-Source Threshold Voltage
    4.8 V
  • Pd - Power Dissipation
    52 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Vgs - Gate-Source Voltage
    - 20 V, + 20 V
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    3000
  • Mounting Styles
    SMD/SMT
  • Channel Mode
    Enhancement
  • Manufacturer
    Transphorm
  • Brand
    Transphorm
  • Qg - Gate Charge
    8 nC
  • Rds On - Drain-Source Resistance
    180 mOhms
  • RoHS
    Details
  • Id - Continuous Drain Current
    13 A
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Reel
  • Subcategory
    MOSFETs
  • Number of Channels
    1 Channel
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    180mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id
    4.8V @ 500μA
  • Input Capacitance (Ciss) (Max) @ Vds
    598 pF @ 400 V
  • Gate Charge (Qg) (Max) @ Vgs
    8 nC @ 10 V
  • Drain to Source Voltage (Vdss)
    650 V
  • Vgs (Max)
    ±20V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • FET Feature
    -
  • Product Category

    a particular group of related products.

    MOSFET
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