Transphorm TP65H050G4BS

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263

Mfr

Transphorm

Package

Tube

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

119W (Tc)

Base Product Number

TP65H050

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

49.2 ns

Vgs th - Gate-Source Threshold Voltage

4.8 V

Pd - Power Dissipation

119 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Transphorm

Brand

Transphorm

Qg - Gate Charge

16 nC

Rds On - Drain-Source Resistance

60 mOhms

RoHS

Details

Typical Turn-Off Delay Time

88.3 ns

Id - Continuous Drain Current

34 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Bulk

Subcategory

MOSFETs

Number of Channels

1 Channel

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

60mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4.8V @ 700μA

Input Capacitance (Ciss) (Max) @ Vds

1000 pF @ 400 V

Gate Charge (Qg) (Max) @ Vgs

24 nC @ 10 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

11.3 ns

Drain to Source Voltage (Vdss)

650 V

Vgs (Max)

±20V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

FET Feature

-

Product Category

a particular group of related products.

MOSFET