Transphorm TP65H300G4LSG-TR

Package / Case

PQFN-8x8-3

Mounting Type

Surface Mount

Supplier Device Package

3-PQFN (8x8)

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

6.5 A

Rds On - Drain-Source Resistance

492 mOhms

Vgs - Gate-Source Voltage

- 18 V, + 18 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Qg - Gate Charge

9.6 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Pd - Power Dissipation

21 W

Channel Mode

Enhancement

Moisture Sensitive

Yes

Factory Pack QuantityFactory Pack Quantity

500

Package

Cut Tape (CT);Digi-Reel®;Tube;

Base Product Number

TP65H300

Current - Continuous Drain (Id) @ 25℃

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V

Mfr

Transphorm

Power Dissipation (Max)

21W (Tc)

Product Status

Active

Series

Gen IV

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Cut Tape

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Number of Channels

1 Channel

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

312mOhm @ 5A, 8V

Vgs(th) (Max) @ Id

2.6V @ 500µA

Input Capacitance (Ciss) (Max) @ Vds

760 pF @ 400 V

Gate Charge (Qg) (Max) @ Vgs

9.6 nC @ 8 V

Drain to Source Voltage (Vdss)

650 V

Vgs (Max)

±18V

Transistor Type

HEMT

FET Feature

-