SemiQ GP2T040A120U

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Mfr

SemiQ

Package

Tube

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

63A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Power Dissipation (Max)

322W (Tc)

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

322 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 25 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

Through Hole

Forward Transconductance - Min

16 S

Channel Mode

Depletion

Manufacturer

SemiQ

Brand

SemiQ

Qg - Gate Charge

118 nC

Rds On - Drain-Source Resistance

37 mOhms

RoHS

Details

Typical Turn-Off Delay Time

22 ns

Id - Continuous Drain Current

63 A

Series

-

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Subcategory

MOSFETs

Configuration

Single

Number of Channels

1 Channel

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

52mOhm @ 40A, 20V

Vgs(th) (Max) @ Id

4V @ 10mA

Input Capacitance (Ciss) (Max) @ Vds

3192 pF @ 1000 V

Gate Charge (Qg) (Max) @ Vgs

118 nC @ 20 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

14 ns

Drain to Source Voltage (Vdss)

1200 V

Vgs (Max)

+25V, -10V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

1 N-Channel

FET Feature

-

Product Category

a particular group of related products.

MOSFET