GCMX040B120S1-E1

SemiQ GCMX040B120S1-E1

Part No:

GCMX040B120S1-E1

Manufacturer:

SemiQ

Datasheet:

-

Package:

SOT-227-4, miniBLOC

AINNX NO:

53860609-GCMX040B120S1-E1

Description:

SIC 1200V 40M MOSFET SOT-227

Products specifications
  • Mounting Type
    Chassis Mount
  • Package / Case
    SOT-227-4, miniBLOC
  • Supplier Device Package
    SOT-227
  • Package
    Tube
  • Base Product Number
    GCMX040
  • Current - Continuous Drain (Id) @ 25℃
    57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Mfr
    SemiQ
  • Power Dissipation (Max)
    242W (Tc)
  • Product Status
    Active
  • Typical Turn-On Delay Time
    15 ns
  • Pd - Power Dissipation
    242 W
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Vgs - Gate-Source Voltage
    25 V
  • Minimum Operating Temperature
    - 55 C
  • Mounting Styles
    Screw Mounts
  • Rds On - Drain-Source Resistance
    52 mOhms
  • Typical Turn-Off Delay Time
    21 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 175°C (TJ)
  • Series
    -
  • Subcategory
    Discrete Semiconductor Modules
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    52mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 10mA
  • Input Capacitance (Ciss) (Max) @ Vds
    3185 pF @ 1000 V
  • Gate Charge (Qg) (Max) @ Vgs
    121 nC @ 20 V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    5 ns
  • Drain to Source Voltage (Vdss)
    1200 V
  • Vgs (Max)
    +25V, -10V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    Discrete Semiconductor Modules
  • FET Feature
    -
  • Product
    Power MOSFET Modules
  • Vf - Forward Voltage
    3.8 V
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