GCMS080B120S1-E1

SemiQ GCMS080B120S1-E1

Part No:

GCMS080B120S1-E1

Manufacturer:

SemiQ

Datasheet:

-

Package:

SOT-227-4, miniBLOC

AINNX NO:

28681583-GCMS080B120S1-E1

Description:

SIC 1200V 80M MOSFET & 10A SBD S

Products specifications
  • Mounting Type
    Chassis Mount
  • Package / Case
    SOT-227-4, miniBLOC
  • Supplier Device Package
    SOT-227
  • Mfr
    SemiQ
  • Package
    Tube
  • Product Status
    Active
  • Current - Continuous Drain (Id) @ 25℃
    30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Power Dissipation (Max)
    142W (Tc)
  • Base Product Number
    GCMS080
  • Vr - Reverse Voltage
    1200 V
  • Vds - Drain-Source Breakdown Voltage
    1200 V
  • Typical Turn-On Delay Time
    9 ns
  • Vgs th - Gate-Source Threshold Voltage
    2 V
  • Pd - Power Dissipation
    142 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Vgs - Gate-Source Voltage
    - 10 V, + 25 V
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    10
  • Mounting Styles
    Screw Mounts
  • Manufacturer
    SemiQ
  • Brand
    SemiQ
  • Rds On - Drain-Source Resistance
    77 mOhms
  • RoHS
    Details
  • Typical Turn-Off Delay Time
    16 ns
  • Id - Continuous Drain Current
    30 A
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 175°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Type
    COPACK Power Module
  • Subcategory
    Discrete Semiconductor Modules
  • Configuration
    Single
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id
    4V @ 10mA
  • Input Capacitance (Ciss) (Max) @ Vds
    1374 pF @ 1000 V
  • Gate Charge (Qg) (Max) @ Vgs
    58 nC @ 20 V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    4 ns
  • Drain to Source Voltage (Vdss)
    1200 V
  • Vgs (Max)
    +25V, -10V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    Discrete Semiconductor Modules
  • FET Feature
    -
  • Product
    Power MOSFET Modules
  • Vf - Forward Voltage
    1.5 V at 10 A
  • Product Category

    a particular group of related products.

    Discrete Semiconductor Modules
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