SGR2N60UFD

Samsung Semiconductor SGR2N60UFD

Part No:

SGR2N60UFD

Datasheet:

Package:

-

AINNX NO:

69132681-SGR2N60UFD

Description:

Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, DPAK-3

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    SAMSUNG SEMICONDUCTOR INC
  • Part Package Code
    TO-252
  • Package Description
    SMALL OUTLINE, R-PSSO-G2
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE
  • Turn-off Time-Nom (toff)
    132 ns
  • Turn-on Time-Nom (ton)
    46 ns
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH SPEED SWITCHING
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Current-Max (IC)
    2.4 A
  • Collector-Emitter Voltage-Max
    600 V
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