SGH80N60UFD

Samsung Semiconductor SGH80N60UFD

Part No:

SGH80N60UFD

Package:

-

AINNX NO:

68722819-SGH80N60UFD

Description:

Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    SAMSUNG SEMICONDUCTOR INC
  • Part Package Code
    TO-3P
  • Package Description
    FLANGE MOUNT, R-PSFM-T3
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • Turn-off Time-Nom (toff)
    167 ns
  • Turn-on Time-Nom (ton)
    50 ns
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH SPEED SWITCHING
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    2
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (Abs)
    200 W
  • Collector Current-Max (IC)
    80 A
  • Collector-Emitter Voltage-Max
    600 V
  • Gate-Emitter Voltage-Max
    20 V
  • Gate-Emitter Thr Voltage-Max
    7.5 V
  • Fall Time-Max (tf)
    280 ns
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