K4B2G0846D-HCH9

Samsung K4B2G0846D-HCH9

Part No:

K4B2G0846D-HCH9

Manufacturer:

Samsung

Datasheet:

-

Package:

-

AINNX NO:

23850955-K4B2G0846D-HCH9

Category:

Memory

Description:

DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    78
  • Package Description
    FBGA, BGA78,9X13,32
  • Package Style
    GRID ARRAY, FINE PITCH
  • Number of Words Code
    256000000
  • Package Body Material
    PLASTIC/EPOXY
  • Package Equivalence Code
    BGA78,9X13,32
  • Access Time-Max
    0.255 ns
  • Operating Temperature-Max
    85 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    K4B2G0846D-HCH9
  • Clock Frequency-Max (fCLK)
    667 MHz
  • Number of Words
    268435456 words
  • Supply Voltage-Nom (Vsup)
    1.5 V
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Samsung Semiconductor
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    SAMSUNG SEMICONDUCTOR INC
  • Risk Rank
    5.79
  • Subcategory
    DRAMs
  • Technology
    CMOS
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    BALL
  • Terminal Pitch

    The center distance from one pole to the next.

    0.8 mm
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-PBGA-B78
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Power Supplies

    an electronic circuit that converts the voltage of an alternating current (AC) into a direct current (DC) voltage.?

    1.5 V
  • Temperature Grade

    Temperature grades represent a tire's resistance to heat and its ability to dissipate heat when tested under controlled laboratory test conditions.

    OTHER
  • Supply Current-Max
    0.135 mA
  • Organization
    256MX8
  • Output Characteristics
    3-STATE
  • Memory Width
    8
  • Standby Current-Max
    0.012 A
  • Memory Density
    2147483648 bit
  • I/O Type
    COMMON
  • Memory IC Type
    DDR DRAM
  • Refresh Cycles
    8192
  • Sequential Burst Length
    8
  • Interleaved Burst Length
    8
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