K4B1G1646G-BCH9

Samsung K4B1G1646G-BCH9

Part No:

K4B1G1646G-BCH9

Manufacturer:

Samsung

Datasheet:

-

Package:

-

AINNX NO:

23876640-K4B1G1646G-BCH9

Category:

Memory

Description:

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    96
  • Package Description
    FBGA, BGA96,9X16,32
  • Package Style
    GRID ARRAY, FINE PITCH
  • Moisture Sensitivity Levels
    3
  • Number of Words Code
    64000000
  • Package Body Material
    PLASTIC/EPOXY
  • Package Equivalence Code
    BGA96,9X16,32
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Access Time-Max
    0.255 ns
  • Rohs Code
    Yes
  • Manufacturer Part Number
    K4B1G1646G-BCH9
  • Clock Frequency-Max (fCLK)
    667 MHz
  • Number of Words
    67108864 words
  • Supply Voltage-Nom (Vsup)
    1.5 V
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Manufacturer
    Samsung Semiconductor
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    SAMSUNG SEMICONDUCTOR INC
  • Risk Rank
    8.58
  • JESD-609 Code
    e1
  • Pbfree Code
    Yes
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
    DRAMs
  • Technology
    CMOS
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    BALL
  • Peak Reflow Temperature (Cel)
    225
  • Terminal Pitch

    The center distance from one pole to the next.

    0.8 mm
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-PBGA-B96
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Power Supplies

    an electronic circuit that converts the voltage of an alternating current (AC) into a direct current (DC) voltage.?

    1.5 V
  • Supply Current-Max
    0.17 mA
  • Organization
    64MX16
  • Output Characteristics
    3-STATE
  • Memory Width
    16
  • Standby Current-Max
    0.01 A
  • Memory Density
    1073741824 bit
  • I/O Type
    COMMON
  • Memory IC Type
    DDR DRAM
  • Refresh Cycles
    8192
  • Sequential Burst Length
    4,8
  • Interleaved Burst Length
    4,8
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