Rochester Electronics AUIRLR2908TRL

Lifecycle Status

Obsolete (Last Updated: 4 years ago)

Mount

Surface Mount

Number of Pins

3

Package Quantity

3000

Case/Package

DPAK

Number of Elements

1

RoHS

Compliant

Schedule B

8541290080

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

36 ns

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

175 °C

Min Operating Temperature

-55 °C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

120 W

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

120 W

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

12 ns

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

95 ns

Drain to Source Voltage (Vdss)

80 V

Continuous Drain Current (ID)

28 A

Gate to Source Voltage (Vgs)

16 V

Drain to Source Breakdown Voltage

80 V

Input Capacitance

The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

1.89 nF

Max Junction Temperature (Tj)

175 °C

Drain to Source Resistance

22.5 mΩ

Rds On Max

28 mΩ

On-State Resistance

28 mΩ

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No