FQP50N06

Rochester Electronics LLC FQP50N06

Part No:

FQP50N06

Package:

-

AINNX NO:

68716208-FQP50N06

Description:

50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Material
    polyamide PA66, white
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Exterior Housing Material
    1
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    ROCHESTER ELECTRONICS LLC
  • Part Package Code
    TO-220AB
  • Package Description
    TO-220, 3 PIN
  • Drain Current-Max (ID)
    50 A
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • Characteristic
    thread (d) - M4; thread length (L) - 20 mm
  • JESD-609 Code
    e3
  • Pbfree Code
    Yes
  • Type
    Polyamide bolt series DIN 933 with full thread
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    COMMERCIAL
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-220AB
  • Drain-source On Resistance-Max
    0.022 Ω
  • Pulsed Drain Current-Max (IDM)
    200 A
  • DS Breakdown Voltage-Min
    60 V
  • Avalanche Energy Rating (Eas)
    490 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Saturation Current
    NOT APPLICABLE
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