BAS85,115

NXP Semiconductors BAS85,115

Part No:

BAS85,115

Manufacturer:

NXP Semiconductors

Package:

-

AINNX NO:

21795327-BAS85,115

Category:

Diodes - RF

Description:

Rectifier Diode Schottky 30V 0.2A 2-Pin Mini-MELF T/R

Products specifications
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Number of Pins
    2
  • Weight
    4.535924 g
  • ECCN (US)
    EAR99
  • HTS
    8541.10.00.80
  • Maximum DC Reverse Voltage (V)
    30
  • Maximum Continuous Forward Current (A)
    0.2
  • Peak Non-Repetitive Surge Current (A)
    5
  • Peak Forward Voltage (V)
  • Peak Reverse Current (uA)
    2.3@25V
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    125
  • Automotive
    No
  • Supplier Package
    Mini-MELF
  • Military
    No
  • Mounting
    Surface Mount
  • Package Length
    3.7(Max)
  • PCB changed
    2
  • RoHS
    Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape and Reel
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Termination
    SMD/SMT
  • Type
    Schottky Diode
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    125 °C
  • Min Operating Temperature
    -65 °C
  • Pin Count

    a count of all of the component leads (or pins)

    2
  • Configuration
    Single
  • Voltage
    30 V
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Current
    2 A
  • Forward Current

    Current which flows upon application of forward voltage.

    200 mA
  • Max Reverse Leakage Current
    2.3 µA
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    5 A
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    800 mV
  • Max Reverse Voltage (DC)
    30 V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    200 mA
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    2.3 µA
  • Max Repetitive Reverse Voltage (Vrrm)
    30 V
  • Peak Non-Repetitive Surge Current
    5 A
  • Max Forward Surge Current (Ifsm)
    5 A
  • Diameter
    1.6(Max)
  • Width
    1.6 mm
  • Height
    1.6 mm
  • Length
    3.7 mm
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    Yes with exemptions
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
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