Nexperia USA Inc. PMCXB900UEZ

Factory Lead Time

4 Weeks

Mounting Type

Surface Mount

Package / Case

6-XFDFN Exposed Pad

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Number of Pins

6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

600mA 500mA

Number of Elements

2

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Series

TrenchFET®

Published

2015

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

265mW

Terminal Position

DUAL

Pin Count

a count of all of the component leads (or pins)

6

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N and P-Channel Complementary

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

620m Ω @ 600mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

21.3pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

0.7nC @ 4.5V

Drain to Source Voltage (Vdss)

20V

Polarity/Channel Type

N-CHANNEL AND P-CHANNEL

Continuous Drain Current (ID)

500mA

Gate to Source Voltage (Vgs)

8V

DS Breakdown Voltage-Min

20V

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Logic Level Gate

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant