PMGD290UCEAX

Nexperia USA Inc. PMGD290UCEAX

Part No:

PMGD290UCEAX

Manufacturer:

Nexperia USA Inc.

Datasheet:

PMGD290UCEA

Package:

6-TSSOP, SC-88, SOT-363

ROHS:

AINNX NO:

6378874-PMGD290UCEAX

Description:

MOSFET N/P-CH 20V 6TSSOP

Products specifications
  • Factory Lead Time
    4 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Current - Continuous Drain (Id) @ 25℃
    725mA 500mA
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    80 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2014
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    280mW
  • Pin Count

    a count of all of the component leads (or pins)

    6
  • Number of Channels
    2
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Dual
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    18 ns
  • FET Type
    N and P-Channel
  • Rds On (Max) @ Id, Vgs
    380m Ω @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    83pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    0.68nC @ 4.5V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    30ns
  • Fall Time (Typ)
    72 ns
  • Continuous Drain Current (ID)
    500mA
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    20V
  • FET Feature
    Logic Level Gate
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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