BSS138PS,115

Nexperia USA Inc. BSS138PS,115

Part No:

BSS138PS,115

Manufacturer:

Nexperia USA Inc.

Package:

6-TSSOP, SC-88, SOT-363

ROHS:

AINNX NO:

6377204-BSS138PS,115

Description:

MOSFET 2N-CH 60V 0.32A 6TSSOP

Products specifications
  • Factory Lead Time
    4 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Number of Elements
    2
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    9 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101, TrenchMOS™
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    1.6Ohm
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOGIC LEVEL COMPATIBLE
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    420mW
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count

    a count of all of the component leads (or pins)

    6
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    280mW
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    2 ns
  • Power - Max
    420mW
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.6 Ω @ 300mA, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    0.8nC @ 4.5V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    3ns
  • Fall Time (Typ)
    4 ns
  • Continuous Drain Current (ID)
    320mA
  • Threshold Voltage
    1.2V
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage

    A Dual power supply is a regular direct current power supply. It can provide a positive as well as negative voltage. It ensures stable power supply to the device as well as it helps to prevent system damage.

    60V
  • Drain Current-Max (Abs) (ID)
    0.32A
  • Drain to Source Breakdown Voltage
    60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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