BUK7K8R7-40EX

Nexperia USA Inc. BUK7K8R7-40EX

Part No:

BUK7K8R7-40EX

Manufacturer:

Nexperia USA Inc.

Datasheet:

BUK7K8R7-40E

Package:

SOT-1205, 8-LFPAK56

ROHS:

AINNX NO:

6378425-BUK7K8R7-40EX

Description:

MOSFET 2N-CH 40V 30A 56LFPAK

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-1205, 8-LFPAK56
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Number of Elements
    2
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2013
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    53W
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count

    a count of all of the component leads (or pins)

    8
  • Reference Standard
    AEC-Q101; IEC-60134
  • JESD-30 Code
    R-PDSO-G6
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Power - Max
    53W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.5m Ω @ 15A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    1439pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    21.8nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Continuous Drain Current (ID)
    30A
  • Pulsed Drain Current-Max (IDM)
    225A
  • DS Breakdown Voltage-Min
    40V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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