RD60HUF1

Mitsubishi Electric RD60HUF1

Part No:

RD60HUF1

Manufacturer:

Mitsubishi Electric

Datasheet:

Package:

-

AINNX NO:

69130853-RD60HUF1

Description:

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    MITSUBISHI ELECTRIC CORP
  • Package Description
    FLANGE MOUNT, R-CDFM-F2
  • Drain Current-Max (ID)
    20 A
  • Number of Elements
    1
  • Operating Temperature-Max
    175 °C
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT
  • ECCN Code
    EAR99
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-CDFM-F2
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • DS Breakdown Voltage-Min
    30 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    150 W
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Mitsubishi Electric RD60HUF1.
  • Datasheets :