UF2820R

MA-COM UF2820R

Part No:

UF2820R

Manufacturer:

MA-COM

Datasheet:

-

Package:

-

AINNX NO:

24141183-UF2820R

Description:

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Products specifications
  • Mount
    Screw
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Pins
    6
  • Number of Terminals
    6
  • Transistor Element Material
    SILICON
  • RoHS
    Compliant
  • Package Description
    FLANGE MOUNT, O-CXFM-F6
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Operating Temperature-Max
    200 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    UF2820R
  • Package Shape
    ROUND
  • Manufacturer
    MACOM
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    M/A-COM TECHNOLOGY SOLUTIONS INC
  • Risk Rank
    5.24
  • Drain Current-Max (ID)
    4 A
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    200 °C
  • Min Operating Temperature
    -55 °C
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    UNSPECIFIED
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    O-CXFM-F6
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Continuous Drain Current (ID)
    4 A
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain Current-Max (Abs) (ID)
    4 A
  • DS Breakdown Voltage-Min
    65 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    63 W
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
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