UF2810P

MA-COM UF2810P

Part No:

UF2810P

Manufacturer:

MA-COM

Datasheet:

-

Package:

-

AINNX NO:

25884219-UF2810P

Description:

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Package Description
    FLANGE MOUNT, R-CDFM-F4
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    200 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    UF2810P
  • Package Shape
    RECTANGULAR
  • Manufacturer
    MACOM
  • Number of Elements
    2
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    M/A-COM TECHNOLOGY SOLUTIONS INC
  • Risk Rank
    5.3
  • Drain Current-Max (ID)
    1.4 A
  • ECCN Code
    EAR99
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW NOISE
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • JESD-30 Code
    R-CDFM-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    COMMON SOURCE, 2 ELEMENTS
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (Abs) (ID)
    1.4 A
  • DS Breakdown Voltage-Min
    65 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    26.9 W
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
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