UF28100M

MA-COM UF28100M

Part No:

UF28100M

Manufacturer:

MA-COM

Datasheet:

-

Package:

-

AINNX NO:

24772230-UF28100M

Description:

Products specifications
  • Mount
    Screw
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Pins
    5
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Drain Source Voltage (Max)
    65(V)
  • Continuous Drain Current
    12(A)
  • Power Gain (Typ)@Vds
    10(Min)(dB)
  • Input Capacitance (Typ)@Vds
    135(MAX)@28V(pF)
  • Operating Temp Range
    -55C to 200C
  • Power Dissipation (Max)
    250000(mW)
  • Output Power (Max)
    100
  • Channel Mode
    Enhancement
  • Drain Efficiency (Typ)
    50(Min)(%)
  • Number of Elements
    1
  • Frequency(Max)
    500(MHz)
  • Rad Hardened
    No
  • Mounting
    Screw
  • Factory Pack QuantityFactory Pack Quantity
    10
  • Manufacturer
    MACOM
  • Brand
    MACOM
  • RoHS
    Details
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    200 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    UF28100M
  • Package Shape
    RECTANGULAR
  • Part Life Cycle Code
    Transferred
  • Ihs Manufacturer
    TE CONNECTIVITY LTD
  • Risk Rank
    5.32
  • Drain Current-Max (ID)
    12 A
  • Usage Level
    Military grade
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    200 °C
  • Min Operating Temperature
    -55 °C
  • HTS Code

    HTS (Harmonized Tariff Schedule) codes are product classification codes between 8-1 digits. The first six digits are an HS code, and the countries of import assign the subsequent digits to provide additional classification. U.S. HTS codes are 1 digits and are administered by the U.S. International Trade Commission.

    8541.29.00.75
  • Subcategory
    MOSFETs
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    250 W
  • Technology
    Si
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    5
  • JESD-30 Code
    R-CDFM-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    RF MOSFET Transistors
  • Continuous Drain Current (ID)
    12 A
  • Gate to Source Voltage (Vgs)
    20 V
  • Max Frequency
    500 MHz
  • Screening Level
    Military
  • DS Breakdown Voltage-Min
    65 V
  • Channel Type
    N
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Feedback Cap-Max (Crss)
    24 pF
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY BAND
  • Power Dissipation Ambient-Max
    250 W
  • Frequency (Min)
    100(MHz)
  • Power Gain-Min (Gp)
    10 dB
  • Product Category

    a particular group of related products.

    RF MOSFET Transistors
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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