DU2810S

MA-COM DU2810S

Part No:

DU2810S

Manufacturer:

MA-COM

Datasheet:

-

Package:

-

AINNX NO:

24749320-DU2810S

Description:

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Products specifications
  • Mount
    Screw
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Pins
    4
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Factory Pack QuantityFactory Pack Quantity
    20
  • Manufacturer
    MACOM
  • Brand
    MACOM
  • RoHS
    Details
  • Vds - Drain-Source Breakdown Voltage
    65 V
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 200 C
  • Minimum Operating Temperature
    -
  • Mounting Styles
    Flange Mount
  • Rds On - Drain-Source Resistance
    -
  • Id - Continuous Drain Current
    2.8 A
  • Package Description
    FLANGE MOUNT, O-CRFM-F4
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Temperature-Max
    200 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    DU2810S
  • Package Shape
    ROUND
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    M/A-COM TECHNOLOGY SOLUTIONS INC
  • Risk Rank
    5.26
  • Drain Current-Max (ID)
    2.8 A
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • ECCN Code
    EAR99
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    200 °C
  • Min Operating Temperature
    -65 °C
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    LOW NOISE
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Terminal Position
    RADIAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    O-CRFM-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    175 MHz
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    10 W
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    RF MOSFET Transistors
  • Continuous Drain Current (ID)
    2.8 A
  • Gate to Source Voltage (Vgs)
    20 V
  • Gain
    13 dB
  • Drain Current-Max (Abs) (ID)
    2.8 A
  • DS Breakdown Voltage-Min
    65 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    35 W
  • Highest Frequency Band
    VERY HIGH FREQUENCY BAND
  • Product Category

    a particular group of related products.

    RF MOSFET Transistors
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