Package / Case
TO-263-3
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
55
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
140
Maximum Drain Source Resistance (mOhm)
5.4@10V
Typical Gate Charge @ Vgs (nC)
82@10V
Typical Gate Charge @ 10V (nC)
82
Typical Input Capacitance @ Vds (pF)
4760@25V
Maximum Power Dissipation (mW)
180000
Typical Fall Time (ns)
17
Typical Rise Time (ns)
35
Typical Turn-Off Delay Time (ns)
21
Typical Turn-On Delay Time (ns)
13
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Surface Mount
Package Height
4.83(Max)
Package Width
9.65(Max)
Package Length
10.29(Max)
PCB changed
2
Tab
Tab
Supplier Package
TO-263AA
Vds - Drain-Source Breakdown Voltage
55 V
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
180 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Qg - Gate Charge
82 nC
Rds On - Drain-Source Resistance
5.4 mOhms
Id - Continuous Drain Current
140 A
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Technology
Si
Pin Count
a count of all of the component leads (or pins)
3
Configuration
Single
Number of Channels
1 Channel
Channel Type
N