Material
Si
EU RoHS
Compliant with Exemption
Automotive
No
PPAP
No
Category
Power MOSFET
Process Technology
HiperFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
150
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
100
Maximum Drain Source Resistance (mOhm)
13@10V
Typical Gate Charge @ Vgs (nC)
240@10V
Typical Gate Charge @ 10V (nC)
240
Typical Input Capacitance @ Vds (pF)
7000@25V
Maximum Power Dissipation (mW)
300000
Typical Fall Time (ns)
36
Typical Rise Time (ns)
32
Typical Turn-Off Delay Time (ns)
150
Typical Turn-On Delay Time (ns)
30
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Through Hole
Package Height
21.34(Max)
Package Width
5.21(Max)
Package Length
16.13(Max)
PCB changed
3
Tab
Tab
Supplier Package
ISOPLUS 247
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Pin Count
a count of all of the component leads (or pins)
3
Configuration
Single
Channel Type
N