Littelfuse IXFP20N50P3M

Package / Case

TO-220-3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

No

PPAP

No

Category

Power MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

8

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Typical Gate Charge @ Vgs (nC)

36@10V

Typical Gate Charge @ 10V (nC)

36

Typical Input Capacitance @ Vds (pF)

1800@25V

Maximum Power Dissipation (mW)

58000

Typical Fall Time (ns)

9

Typical Rise Time (ns)

5

Typical Turn-Off Delay Time (ns)

43

Typical Turn-On Delay Time (ns)

10

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Through Hole

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220AB

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

58 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

Through Hole

Qg - Gate Charge

36 nC

Rds On - Drain-Source Resistance

300 mOhms

Id - Continuous Drain Current

8 A

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Technology

Si

Pin Count

a count of all of the component leads (or pins)

3

Configuration

Single

Number of Channels

1 Channel

Channel Type

N