Littelfuse IXFT69N30P

Package / Case

TO-268-3

EU RoHS

Compliant with Exemption

ECCN (US)

EAR99

SVHC

Yes

SVHC Exceeds Threshold

Yes

Automotive

No

PPAP

No

Category

Power MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

69

Maximum Drain Source Resistance (mOhm)

49@10V

Typical Gate Charge @ Vgs (nC)

156@10V

Typical Gate Charge @ 10V (nC)

156

Typical Input Capacitance @ Vds (pF)

4960@25V

Maximum Power Dissipation (mW)

500000

Typical Fall Time (ns)

27

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

75

Typical Turn-On Delay Time (ns)

25

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Surface Mount

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268

Vds - Drain-Source Breakdown Voltage

300 V

Pd - Power Dissipation

500 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

49 mOhms

Id - Continuous Drain Current

69 A

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Technology

Si

Pin Count

a count of all of the component leads (or pins)

3

Configuration

Single

Number of Channels

1 Channel

Channel Type

N