EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Automotive
No
PPAP
No
Category
Power MOSFET
Process Technology
HiperFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
300
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
5
Maximum Continuous Drain Current (A)
94
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain Source Resistance (mOhm)
36@10V
Typical Gate Charge @ Vgs (nC)
102@10V
Typical Gate Charge @ 10V (nC)
102
Typical Input Capacitance @ Vds (pF)
5510@25V
Maximum Power Dissipation (mW)
1040000
Typical Fall Time (ns)
11
Typical Rise Time (ns)
19
Typical Turn-Off Delay Time (ns)
49
Typical Turn-On Delay Time (ns)
23
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Through Hole
Package Width
4.9(Max)
Package Length
15.8(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-3P
Part Status
Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.
Active
Pin Count
a count of all of the component leads (or pins)
3
Configuration
Single
Channel Type
N