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G3S12010A

Global Power Technology-GPT G3S12010A

Part No:

G3S12010A

Manufacturer:

Global Power Technology-GPT

Datasheet:

Package:

TO-220-2

AINNX NO:

28488052-G3S12010A

Category:

Diodes - Rectifiers - Single

Description:

DIODE SIC 1.2KV 34.8A TO220AC

Products specifications

Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Mfr
Global Power Technology-GPT
Package
Tape & Box (TB)
Product Status
Active
Series
-
Speed
No Recovery Time > 500mA (Io)
Diode Type
Silicon Carbide Schottky
Current - Reverse Leakage @ Vr
50 μA @ 1200 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
34.8A
Capacitance @ Vr, F
770pF @ 0V, 1MHz
Reverse Recovery Time (trr)
0 ns

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