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G3S06510D

Global Power G3S06510D

Part No:

G3S06510D

Manufacturer:

Datasheet:

Package:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AINNX NO:

51628691-G3S06510D

Category:

Diodes - Rectifiers - Single

Description:

650V/ 10A Silicon Carbide Power Schottky Barrier Diode

Products specifications

Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263
Rad Hardened
No
Package
Cut Tape (CT);Tape & Box (TB);
Mfr
Global Power Technology-GPT
Product Status
Active
Series
-
Speed
No Recovery Time > 500mA (Io)
Diode Type
Silicon Carbide Schottky
Current - Reverse Leakage @ Vr
50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
34A
Capacitance @ Vr, F
690pF @ 0V, 1MHz
Reverse Recovery Time (trr)
0 ns

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