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G5S6506Z

Global Power G5S6506Z

Part No:

G5S6506Z

Manufacturer:

Datasheet:

Package:

8-PowerTDFN

AINNX NO:

51630822-G5S6506Z

Category:

Diodes - Rectifiers - Single

Description:

DIODE SIL CARB 650V 30.5A 8DFN

Products specifications

Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (4.9x5.75)
Package
Cut Tape (CT);Tape & Box (TB);
Mfr
Global Power Technology-GPT
Product Status
Active
Series
-
Speed
No Recovery Time > 500mA (Io)
Diode Type
Silicon Carbide Schottky
Current - Reverse Leakage @ Vr
50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 6 A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
30.5A
Capacitance @ Vr, F
395pF @ 0V, 1MHz
Reverse Recovery Time (trr)
0 ns

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