GeneSiC Semiconductor G3R350MT12J

Package / Case

TO-263-7

Mounting Type

Surface Mount

Supplier Device Package

TO-263-7

Continuous Drain Current Id

11A

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

64 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Forward Transconductance - Min

1.8 S

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

10 nC

Rds On - Drain-Source Resistance

350 mOhms

RoHS

Details

Typical Turn-Off Delay Time

6 ns

Id - Continuous Drain Current

10 A

Package

Tube

Base Product Number

G3R350

Current - Continuous Drain (Id) @ 25℃

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Mfr

GeneSiC Semiconductor

Power Dissipation (Max)

75W (Tc)

Product Status

Active

Series

G3R

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Type

SiC MOSFET

Subcategory

MOSFETs

Technology

SiC

Configuration

Single

Number of Channels

1 Channel

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

75W

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

420mOhm @ 4A, 15V

Vgs(th) (Max) @ Id

2.69V @ 2mA

Input Capacitance (Ciss) (Max) @ Vds

334 pF @ 800 V

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 15 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

5 ns

Drain to Source Voltage (Vdss)

1200 V

Vgs (Max)

±15V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

MOSFET

Channel Type

N Channel

FET Feature

-

Product

MOSFET

Product Category

a particular group of related products.

MOSFET