G3R30MT12K

GeneSiC Semiconductor G3R30MT12K

Part No:

G3R30MT12K

Datasheet:

-

Package:

QFN

AINNX NO:

36382244-G3R30MT12K

Description:

Silicon Carbide MOSFET N Channel Enhancement Mode

Products specifications
  • Package / Case
    QFN
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-247-4
  • Standard Frequency
    33.333
  • Operating Temp Range
    -20C to 70C
  • Operating Supply Voltage (Max)
    3.63(V)
  • Operating Supply Voltage (Min)
    2.25(V)
  • Programmable
    No
  • Continuous Drain Current Id
    90A
  • Package
    Tube
  • Base Product Number
    G3R30
  • Current - Continuous Drain (Id) @ 25℃
    90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Mfr
    GeneSiC Semiconductor
  • Power Dissipation (Max)
    400W (Tc)
  • Product Status
    Active
  • Vds - Drain-Source Breakdown Voltage
    1.2 kV
  • Vgs th - Gate-Source Threshold Voltage
    2.7 V
  • Pd - Power Dissipation
    281 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Vgs - Gate-Source Voltage
    - 5 V, + 15 V
  • Minimum Operating Temperature
    - 55 C
  • Mounting Styles
    Through Hole
  • Channel Mode
    Enhancement
  • Qg - Gate Charge
    118 nC
  • Rds On - Drain-Source Resistance
    30 mOhms
  • Id - Continuous Drain Current
    70 A
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Bulk
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 175°C (TJ)
  • Series
    G3R™
  • Type
    CLOCK OSCILLATOR
  • Technology
    SiCFET (Silicon Carbide)
  • Frequency Stability

    the variation of output frequency of a crystal oscillator due to external conditions like temperature variation, voltage variation, output load variation, and frequency aging.

    ±25(ppm)
  • Symmetry-Max
    55(%)
  • Number of Channels
    1 Channel
  • Load Capacitance

    the amount of capacitance measured or computed across the crystal terminals on the PCB. Frequency Tolerance. Frequency tolerance refers to the allowable deviation from nominal, in parts per million (PPM), at a specific temperature, usually +25°C.

    15(pF)
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    400W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    36mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id
    2.69V @ 12mA
  • Input Capacitance (Ciss) (Max) @ Vds
    3901 pF @ 800 V
  • Gate Charge (Qg) (Max) @ Vgs
    155 nC @ 15 V
  • Drain to Source Voltage (Vdss)
    1200 V
  • Vgs (Max)
    ±15V
  • Channel Type
    N Channel
  • FET Feature
    -
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