CTLDM7120-M621H TR PBFREE

Central Semiconductor CTLDM7120-M621H TR PBFREE

Part No:

CTLDM7120-M621H TR PBFREE

Datasheet:

-

Package:

TLM621H

AINNX NO:

31243731-CTLDM7120-M621H TR PBFREE

Description:

MOSFET N-Ch Enh Mode FET 20Vds 8.0Vgs 1.0 ID

Products specifications
  • Package / Case
    TLM621H
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • RoHS
    Details
  • Mounting Styles
    SMD/SMT
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    20 V
  • Id - Continuous Drain Current
    1 A
  • Rds On - Drain-Source Resistance
    250 mOhms
  • Vgs - Gate-Source Voltage
    - 8 V, + 8 V
  • Vgs th - Gate-Source Threshold Voltage
    1.2 V
  • Qg - Gate Charge
    2.4 nC
  • Minimum Operating Temperature
    - 65 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Pd - Power Dissipation
    1.6 W
  • Channel Mode
    Enhancement
  • Factory Pack QuantityFactory Pack Quantity
    3000
  • Operating Temperature-Max
    150 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    CTLDM7120-M621HTRPBFREE
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    CENTRAL SEMICONDUCTOR CORP
  • Risk Rank
    5.84
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Reach Compliance Code
    compliant
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (Abs) (ID)
    1 A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    1.6 W
0 Similar Products Remaining