Central Semiconductor CDM2205-800FP TIN/LEAD

Package / Case

TO-220FP-3

RoHS

N

Mounting Styles

Through Hole

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

800 V

Id - Continuous Drain Current

5 A

Rds On - Drain-Source Resistance

2.7 Ohms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

17.4 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Pd - Power Dissipation

48 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

50

Typical Turn-Off Delay Time

44 ns

Typical Turn-On Delay Time

13 ns

Unit Weight

0.068784 oz

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Series

CDM2205

Configuration

Single

Number of Channels

1 Channel

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

27 ns

Transistor Type

1 N-Channel