CEDM7002AETR

Central Semiconductor CEDM7002AETR

Part No:

CEDM7002AETR

Datasheet:

-

Package:

SC-101, SOT-883

AINNX NO:

29212909-CEDM7002AETR

Description:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-101, SOT-883
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Supplier Device Package
    SOT-883L
  • Current - Continuous Drain (Id) @ 25℃
    300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 10V
  • Power Dissipation (Max)
    100mW (Ta)
  • Operating Temperature-Max
    150 °C
  • Manufacturer Part Number
    CEDM7002AETR
  • Manufacturer
    Central Semiconductor Corp
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    CENTRAL SEMICONDUCTOR CORP
  • Risk Rank
    5.75
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -65°C ~ 150°C (TJ)
  • Series
    --
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Reach Compliance Code
    compliant
  • Configuration
    Single
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.4 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    0.5nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    60V
  • Vgs (Max)
    20V
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (Abs) (ID)
    0.3 A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    0.1 W
  • FET Feature
    --
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