AGR21180EF

Advanced AGR21180EF

Part No:

AGR21180EF

Manufacturer:

Advanced

Datasheet:

-

Package:

-

AINNX NO:

48651472-AGR21180EF

Description:

RF MOSFET Transistors 2.11-2.17GHz 38Watt Gain 14dB

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    4
  • Transistor Element Material
    SILICON
  • Factory Pack QuantityFactory Pack Quantity
    10
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Brand
    Advanced Semiconductor, Inc.
  • RoHS
    Details
  • Package Description
    FLANGE MOUNT, R-CDFM-F4
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Reflow Temperature-Max (s)
    30
  • Operating Temperature-Max
    150 °C
  • Manufacturer Part Number
    AGR21180EF
  • Package Shape
    RECTANGULAR
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    AVAGO TECHNOLOGIES INC
  • Risk Rank
    5.25
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • JESD-609 Code
    e0
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH RELIABILITY
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    225
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-CDFM-F4
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    RF MOSFET Transistors
  • DS Breakdown Voltage-Min
    65 V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    500 W
  • Highest Frequency Band
    S BAND
  • Product Category

    a particular group of related products.

    RF MOSFET Transistors
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