Transistors - Special Purpose
Manufacturer+1
ECCN Code
Ihs Manufacturer
Part Life Cycle Code
Reach Compliance Code
Package Description
Polarity/Channel Type
FET Technology
Configuration
Operating Mode
Surface Mount
JESD-30 Code
Number of Terminals
- RD02MUS1B
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
manufacturer: Mitsubishi Electric
- InventoryIn Stock
- MOQ1
- SPQ1
- FS10VS-14A
Power Field-Effect Transistor, 10A I(D), 700V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
manufacturer: Mitsubishi Electric
- InventoryIn Stock
- MOQ1
- SPQ1
- Inventory10000
- MOQ1
- SPQ1
- Inventory10385
- MOQ1
- SPQ1
- Inventory2000
- MOQ1
- SPQ1
- FS1UM-18A
Description: Power Field-Effect Transistor, 1A I(D), 900V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
manufacturer: Mitsubishi Electric
- InventoryIn Stock
- MOQ1
- SPQ1
- Inventory48000
- MOQ1
- SPQ1
- MGFK33V4045
Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-11, 3 PIN
manufacturer: Mitsubishi Electric
- InventoryIn Stock
- MOQ1
- SPQ1
- RD00HVS1
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
manufacturer: Mitsubishi Electric
- Inventory3000
- MOQ1
- SPQ1
- FS12KMA-4A
Power Field-Effect Transistor, 12A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
manufacturer: Mitsubishi Electric
- InventoryIn Stock
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- MGFC45V4450A
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
manufacturer: Mitsubishi Electric
- InventoryIn Stock
- MOQ1
- SPQ1
- MGFC36V4450A-51
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
manufacturer: Mitsubishi Electric
- InventoryIn Stock
- MOQ1
- SPQ1
- MGF1923-01
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,
manufacturer: Mitsubishi Electric
- Inventory4000
- MOQ1
- SPQ1
- RD35HUF2
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8
manufacturer: Mitsubishi Electric
- Inventory500
- MOQ1
- SPQ1
- InventoryIn Stock
- MOQ1
- SPQ1
- MGFC42V4450
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
manufacturer: Mitsubishi Electric
- Inventory100
- MOQ1
- SPQ1
- MGF1102
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, GD-2, 4 PIN
manufacturer: Mitsubishi Electric
- InventoryIn Stock
- MOQ1
- SPQ1
- RD60HUF1
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
manufacturer: Mitsubishi Electric
- Inventory200
- MOQ1
- SPQ1
- MGFC42V3436
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN
manufacturer: Mitsubishi Electric
- Inventory20
- MOQ1
- SPQ1