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Transistors - Special Purpose

114 Results

  • Manufacturer+1

  • ECCN Code

  • Ihs Manufacturer

  • Part Life Cycle Code

  • Reach Compliance Code

  • Package Description

  • Polarity/Channel Type

  • FET Technology

  • Configuration

  • Operating Mode

  • Surface Mount

  • JESD-30 Code

  • Number of Terminals

  • RD02MUS1B
    RD02MUS1B

    RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FS10VS-14A
    FS10VS-14A

    Power Field-Effect Transistor, 10A I(D), 700V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RD02LUS2-T513
    RD02LUS2-T513

    RF Power Field-Effect Transistor,

    manufacturer: Mitsubishi Electric

    • Inventory10000
    • MOQ1
    • SPQ1
  • FS2UM-16A
    FS2UM-16A

    -

    manufacturer: Mitsubishi

    • Inventory10385
    • MOQ1
    • SPQ1
  • CT20ASJ-8
    CT20ASJ-8

    -

    manufacturer: Mitsubishi

    • Inventory2000
    • MOQ1
    • SPQ1
  • FS1UM-18A
    FS1UM-18A

    Description: Power Field-Effect Transistor, 1A I(D), 900V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RD07MUS2B-T512
    RD07MUS2B-T512

    RF Power Field-Effect Transistor,

    manufacturer: Mitsubishi Electric

    • Inventory48000
    • MOQ1
    • SPQ1
  • MGFK33V4045
    MGFK33V4045

    Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-11, 3 PIN

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RD00HVS1
    RD00HVS1

    RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

    manufacturer: Mitsubishi Electric

    • Inventory3000
    • MOQ1
    • SPQ1
  • FS12KMA-4A
    FS12KMA-4A

    Power Field-Effect Transistor, 12A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • MGFC47B3538B
    MGFC47B3538B

    RF Power Field-Effect Transistor, N-Channel

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • MGFC45V4450A
    MGFC45V4450A

    Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • MGFC36V4450A-51
    MGFC36V4450A-51

    Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • MGF1923-01
    MGF1923-01

    RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,

    manufacturer: Mitsubishi Electric

    • Inventory4000
    • MOQ1
    • SPQ1
  • RD35HUF2
    RD35HUF2

    RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RD70HVF1C-501
    RD70HVF1C-501

    RF Power Field-Effect Transistor,

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • MGFC42V4450
    MGFC42V4450

    RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

    manufacturer: Mitsubishi Electric

    • Inventory100
    • MOQ1
    • SPQ1
  • MGF1102
    MGF1102

    RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, GD-2, 4 PIN

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RD60HUF1
    RD60HUF1

    RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

    manufacturer: Mitsubishi Electric

    • Inventory200
    • MOQ1
    • SPQ1
  • MGFC42V3436
    MGFC42V3436

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

    manufacturer: Mitsubishi Electric

    • Inventory20
    • MOQ1
    • SPQ1