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Transistors - Special Purpose

114 Results

  • Manufacturer+1

  • ECCN Code

  • Ihs Manufacturer

  • Part Life Cycle Code

  • Reach Compliance Code

  • Package Description

  • Polarity/Channel Type

  • FET Technology

  • Configuration

  • Operating Mode

  • Surface Mount

  • JESD-30 Code

  • Number of Terminals

  • MGFS45V2527A
    MGFS45V2527A

    Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-51, 3 PIN

    manufacturer: Mitsubishi Electric

    • Inventory512
    • MOQ1
    • SPQ1
  • RD02MUS1B
    RD02MUS1B

    RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RD35HUF2
    RD35HUF2

    RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8

    manufacturer: Mitsubishi Electric

    • Inventory500
    • MOQ1
    • SPQ1
  • RD70HVF1C-501
    RD70HVF1C-501

    RF Power Field-Effect Transistor,

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RD04HMS2
    RD04HMS2

    RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

    manufacturer: Mitsubishi Electric

    • Inventory1
    • MOQ1
    • SPQ1
  • MGFC36V5258
    MGFC36V5258

    Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RD30HUF1
    RD30HUF1

    RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

    manufacturer: Mitsubishi Electric

    • Inventory500
    • MOQ1
    • SPQ1
  • RD02LUS2-T513
    RD02LUS2-T513

    RF Power Field-Effect Transistor,

    manufacturer: Mitsubishi Electric

    • Inventory68000
    • MOQ1
    • SPQ1
  • RD01MUS1-101
    RD01MUS1-101

    Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • 2SJ145
    2SJ145

    Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SC-70, 3 PIN

    manufacturer: Mitsubishi Electric

    • Inventory63000
    • MOQ1
    • SPQ1
  • FS1UM-18A
    FS1UM-18A

    Description: Power Field-Effect Transistor, 1A I(D), 900V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RD07MUS2B-T512
    RD07MUS2B-T512

    RF Power Field-Effect Transistor,

    manufacturer: Mitsubishi Electric

    • Inventory49450
    • MOQ1
    • SPQ1
  • MGFK33V4045
    MGFK33V4045

    Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-11, 3 PIN

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • MGF4931AM
    MGF4931AM

    RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, P-Channel, High Electron Mobility FET, GD-30, 4 PIN

    manufacturer: Mitsubishi Electric

    • Inventory8950
    • MOQ1
    • SPQ1
  • FM50E2Y-10
    FM50E2Y-10

    Power Field-Effect Transistor, 50A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • 2SK381-T11-E
    2SK381-T11-E

    Description: Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC PACKAGE-3

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FS10VS-14A
    FS10VS-14A

    Power Field-Effect Transistor, 10A I(D), 700V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • MGF0843G
    MGF0843G

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, GF-7, 2 PIN

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • FS50KMJ-03F
    FS50KMJ-03F

    Power Field-Effect Transistor, 50A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN

    manufacturer: Mitsubishi Electric

    • InventoryIn Stock
    • MOQ1
    • SPQ1
  • RD00HVS1
    RD00HVS1

    RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

    manufacturer: Mitsubishi Electric

    • Inventory3000
    • MOQ1
    • SPQ1