All Products
VISHAY SI1965DH-T1-GE3
Part No:
SI1965DH-T1-GE3
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69909741-SI1965DH-T1-GE3
Category:
Description:
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Products specifications
- Type of transistorP-MOSFET x2
- Polarisationunipolar
- Drain-source voltage-12V
- Drain current-1.3A
- Pulsed drain current-3A
- Case1SOT363
- CaseSC70-6
- Gate-source voltage±8V
- MountingSMD
- Kind of package1tape
- Kind of packagereel
- Kind of channelenhanced
- CertificatesRoHS compliant
0 Similar Products Remaining
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$23.964102
$23.91
10+
$22.607658
$226.09
100+
$21.327937
$2,132.77
500+
$20.120765
$10,060.44
1000+
$18.981784
$18,981.80
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Hot Sale
SI1553CDL-T1-GE3
VISHAYTransistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 700/-500mASI4963BDY-T1-GE3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8SI5517DU-T1-GE3
VISHAYTransistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 6/-6A; 8.3WSI1967DH-T1-E3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -1.3A; 1.25WSI4931DY-T1-GE3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8SI1023X-T1-GE3
VISHAYTransistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -390mA; 280mWSIRB40DP-T1-GE3
VISHAYTransistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100ASISF02DN-T1-GE3
VISHAYTransistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 60A; Idm: 140ASISF00DN-T1-GE3
VISHAYTransistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 60A; Idm: 120ASISF06DN-T1-GE3
VISHAYTransistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 81A; Idm: 190A