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VISHAY SI1965DH-T1-GE3
Part No:
SI1965DH-T1-GE3
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69909741-SI1965DH-T1-GE3
Category:
Description:
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -1.3A; 1.25W
Products specifications
- Type of transistorP-MOSFET x2
- Polarisationunipolar
- Drain-source voltage-12V
- Drain current-1.3A
- Pulsed drain current-3A
- Case1SOT363
- CaseSC70-6
- Gate-source voltage±8V
- MountingSMD
- Kind of package1tape
- Kind of packagereel
- Kind of channelenhanced
- CertificatesRoHS compliant
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Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$23.132332
$23.08
10+
$21.822969
$218.27
100+
$20.587668
$2,058.77
500+
$19.422320
$9,711.18
1000+
$18.323005
$18,322.96
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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