Toshiba Semiconductor and Storage TJ8S06M3L,LXHQ

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK+

Mfr

Toshiba Semiconductor and Storage

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

27W (Tc)

Base Product Number

TJ8S06

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

14 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Qualification

AEC-Q101

Pd - Power Dissipation

27 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 10 V

Unit Weight

0.012699 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

TJ8S06M3L,LXHQ(O

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

19 nC

Rds On - Drain-Source Resistance

104 mOhms

RoHS

Details

Typical Turn-Off Delay Time

140 ns

Id - Continuous Drain Current

8 A

Series

U-MOSVI

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

175°C

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Cut Tape

Subcategory

MOSFETs

Number of Channels

1 Channel

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

104mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

890 pF @ 10 V

Gate Charge (Qg) (Max) @ Vgs

19 nC @ 10 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

6 ns

Drain to Source Voltage (Vdss)

60 V

Vgs (Max)

+10V, -20V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

1 P-Channel

FET Feature

-

Product Category

a particular group of related products.

MOSFET