Toshiba Semiconductor and Storage SSM3K329R,LF

Factory Lead Time

16 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-3 Flat Leads

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

3.5A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4V

Number of Elements

1

Power Dissipation (Max)

1W Ta

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

6.4 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Series

U-MOSIII

Published

2007

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Position

DUAL

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PDSO-F3

Configuration

SINGLE WITH BUILT-IN DIODE

Number of Channels

1

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

1W

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

9.2 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

126m Ω @ 1A, 4V

Vgs(th) (Max) @ Id

1V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

123pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 4V

Vgs (Max)

±12V

Continuous Drain Current (ID)

3.5A

Gate to Source Voltage (Vgs)

12V

Drain to Source Breakdown Voltage

30V

Height

880μm

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

RoHS Compliant