SSM3K16FV,L3F

Toshiba Semiconductor and Storage SSM3K16FV,L3F

Part No:

SSM3K16FV,L3F

Datasheet:

-

Package:

SOT-723

AINNX NO:

28808046-SSM3K16FV,L3F

Description:

PB-F VESM S-MOS (LF) TRANSISTOR

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-723
  • Supplier Device Package
    VESM
  • Mfr
    Toshiba Semiconductor and Storage
  • Product Status
    Active
  • Current - Continuous Drain (Id) @ 25℃
    100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4V
  • Power Dissipation (Max)
    150mW (Ta)
  • Continuous Drain Current Id
    0.1
  • Vds - Drain-Source Breakdown Voltage
    20 V
  • Typical Turn-On Delay Time
    70 ns
  • Vgs th - Gate-Source Threshold Voltage
    600 mV
  • Pd - Power Dissipation
    150 mW
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Vgs - Gate-Source Voltage
    - 10 V, + 10 V
  • Unit Weight
    0.000053 oz
  • Minimum Operating Temperature
    -
  • Factory Pack QuantityFactory Pack Quantity
    8000
  • Mounting Styles
    SMD/SMT
  • Forward Transconductance - Min
    40 mS
  • Channel Mode
    Enhancement
  • Manufacturer
    Toshiba
  • Brand
    Toshiba
  • Qg - Gate Charge
    -
  • Tradename
    MOSVI
  • Rds On - Drain-Source Resistance
    3 Ohms
  • RoHS
    Details
  • Typical Turn-Off Delay Time
    125 ns
  • Id - Continuous Drain Current
    100 mA
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Subcategory
    MOSFETs
  • Configuration
    Single
  • Number of Channels
    1 Channel
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id
    1.1V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    9.3 pF @ 3 V
  • Drain to Source Voltage (Vdss)
    20 V
  • Vgs (Max)
    ±10V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • Channel Type
    N
  • FET Feature
    -
  • Product Category

    a particular group of related products.

    MOSFET
0 Similar Products Remaining